OGS100N10F 100V N-Channel MOSFET
$0
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS100N10F is a 100V N-Channel MOSFET featuring advanced split gate trench technology for excellent RDS(ON) and low gate charge. It is 100% UIS and °”Vds tested, designed for high efficiency in load switch, PWM applications, and power management.
OGS100N10F |
|
|
OGS100N10F 100V N-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
100 |
|
BVdss (V) |
100 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
100 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
0 |
|
IF (A) |
20 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Coss Typ (pF) |
0 |
|
Crss Typ (pF) |
0 |
|
Pd (W) |
25 |
|
VRRM (V) |
100 |
|
TJ ( degC) |
25 |
Features |
|
|
Advanced Split Gate Trench Technology |
|
|
Excellent RDS(ON) and Low Gate Charge |
|
|
100% UIS TESTED! |
|
|
100% °”Vds TESTED! |
|
Applications |
|
|
Power Management, Switching Circuits, Motor Drives |
|
Reviews
There are no reviews yet.