OGS100N10R 100V N -Channel MOSFET
N-Channel: 100V 100A
RDS(on)Typ = 6.2m°&@VGS = 10 V
RDS(on)Typ = 8.6m°&@VGS = 4.5V
Very Low On-resistance RDS(ON)
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability
- Description
- Reviews (0)
Description
This Power MOSFET is produced using HT’s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored tOminimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.
OGS100N10R | |
| OGS100N10R 100V N -Channel MOSFET | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 6.2 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 50 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 50 |
| Coss Typ (pF) | 50 |
| Crss Typ (pF) | 50 |
| Pd (W) | 25 |
| Rds(on) Typ (Ohm) | 6.2 |
| VRRM (V) | 100 |
| TJ ( degC) | 25 |
Features | |
| N-Channel: 100V 100A | |
| RDS(on)Typ = 6.2m°&@VGS = 10 V | |
| RDS(on)Typ = 8.6m°&@VGS = 4.5V | |
| Very Low On-resistance RDS(ON) | |
| Low Crss | |
| Fast switching | |
| 100% avalanche tested | |
| Improved dv/dt capability | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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