OGS100N10R 100V N -Channel MOSFET
$0
N-Channel: 100V 100A
RDS(on)Typ = 6.2m°&@VGS = 10 V
RDS(on)Typ = 8.6m°&@VGS = 4.5V
Very Low On-resistance RDS(ON)
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability
- Description
- Reviews (0)
Description
This Power MOSFET is produced using HT’s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored tOminimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.
OGS100N10R |
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OGS100N10R 100V N -Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
100 |
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BVdss (V) |
100 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
6.2 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
50 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
50 |
|
Coss Typ (pF) |
50 |
|
Crss Typ (pF) |
50 |
|
Pd (W) |
25 |
|
Rds(on) Typ (Ohm) |
6.2 |
|
VRRM (V) |
100 |
|
TJ ( degC) |
25 |
Features |
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N-Channel: 100V 100A |
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RDS(on)Typ = 6.2m°&@VGS = 10 V |
|
|
RDS(on)Typ = 8.6m°&@VGS = 4.5V |
|
|
Very Low On-resistance RDS(ON) |
|
|
Low Crss |
|
|
Fast switching |
|
|
100% avalanche tested |
|
|
Improved dv/dt capability |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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