OGS10N030 30V N-Channel MOSFET
$0
30V, 10A
RDS(ON) < 8.5mmOhm @ VGS = 10V
RDS(ON) < 14mmOhm @ VGS = 4.5V
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS10N030 is an HGS N-channel Enhancement Mode Power MOSFET that utilizes advanced trench technology tOdeliver excellent RDS(ON) and low gate charge. This lead-free device is 100% UIS and °”Vds tested, making it suitable for load switching, PWM, and power management applications.
OGS10N030 |
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OGS10N030 30V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
30 |
|
BVdss (V) |
30 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
8.5 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
15 |
|
IF (A) |
20 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
15 |
|
Coss Typ (pF) |
15 |
|
Crss Typ (pF) |
15 |
|
Pd (W) |
25 |
|
VRRM (V) |
30 |
|
TJ ( degC) |
25 |
Features |
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30V, 10A |
|
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RDS(ON) < 8.5mmOhm @ VGS = 10V |
|
|
RDS(ON) < 14mmOhm @ VGS = 4.5V |
|
|
Advanced Trench Technology |
|
|
Provide Excellent RDS(ON) and Low Gate Charge |
|
|
Lead free product is acquired |
|
|
100% UIS TESTED! |
|
|
100% °”Vds TESTED! |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.