OGS10N030 30V N-Channel MOSFET
30V, 10A
RDS(ON) < 8.5mmOhm @ VGS = 10V
RDS(ON) < 14mmOhm @ VGS = 4.5V
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS10N030 is an HGS N-channel Enhancement Mode Power MOSFET that utilizes advanced trench technology tOdeliver excellent RDS(ON) and low gate charge. This lead-free device is 100% UIS and °”Vds tested, making it suitable for load switching, PWM, and power management applications.
OGS10N030 | |
| OGS10N030 30V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 30 |
| BVdss (V) | 30 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 8.5 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 15 |
| IF (A) | 20 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 15 |
| Coss Typ (pF) | 15 |
| Crss Typ (pF) | 15 |
| Pd (W) | 25 |
| VRRM (V) | 30 |
| TJ ( degC) | 25 |
Features | |
| 30V, 10A | |
| RDS(ON) < 8.5mmOhm @ VGS = 10V | |
| RDS(ON) < 14mmOhm @ VGS = 4.5V | |
| Advanced Trench Technology | |
| Provide Excellent RDS(ON) and Low Gate Charge | |
| Lead free product is acquired | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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