OGS10N04 N-Channel Enhancement Mode
$0
VDS =40V,ID =100A
RDS(ON) 0.9mmOhm @ VGS=10V
RDS(ON) 1.3 mmOhm @ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
- Description
- Reviews (0)
Description
The OGS10N04 uses advanced trench technology and design tOprovide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
OGS10N04 |
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OGS10N04 N-Channel Enhancement Mode |
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Property |
Value |
|
BVdss (V) |
0 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
0.9 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
20 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
7965 |
|
Coss Typ (pF) |
4670 |
|
Crss Typ (pF) |
287 |
|
Pd (W) |
147 |
|
TJ ( degC) |
25 |
Features |
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|
VDS =40V,ID =100A |
|
|
RDS(ON) 0.9mmOhm @ VGS=10V |
|
|
RDS(ON) 1.3 mmOhm @ VGS=4.5V |
|
|
High density cell design for ultra low Rdson |
|
|
Fully characterized avalanche voltage and current |
|
|
Good stability and uniformity with high EAS |
|
|
Excellent package for good heat dissipation |
|
|
Special process technology for high ESD capability |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.