OGS110N10F 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS110N10F is a 100V N-Channel MOSFET featuring advanced split gate trench technology. It offers excellent on-resistance (RDS(ON)) and low gate charge, ensuring efficient performance in various applications such as load switches, PWM, and power management. The device is 100% UIS and °”Vds tested for high reliability.
OGS110N10F | |
| OGS110N10F 100V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 0 |
| IF (A) | 20 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| VRRM (V) | 100 |
| TJ ( degC) | 25 |
Features | |
| Advanced Split Gate Trench Technology | |
| Excellent RDS(ON) and Low Gate Charge | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
There are no reviews yet.