OGS110N20W 200V N-Channel MOSFET
$0
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
DC/DC Converter application
Ideal for high-frequency switching and synchronous rectification
- Description
- Reviews (0)
Description
The OGS110N20W is a 200V N-Channel MOSFET utilizing advanced split gate trench technology for low gate charge and excellent on-resistance. It is 100% UIS and °”Vds tested, making it ideal for DC/DC converters and high-frequency switching applications.
OGS110N20W |
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OGS110N20W 200V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
200 |
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BVdss (V) |
200 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
10 |
|
VTH @25 degC (V) |
0 |
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Qg (nC) |
145 |
|
IF (A) |
55 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
10656 |
|
Coss Typ (pF) |
389 |
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Crss Typ (pF) |
16 |
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Pd (W) |
25 |
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VRRM (V) |
200 |
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TJ ( degC) |
-55 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
|
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100% °”Vds TESTED! |
|
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DC/DC Converter application |
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Ideal for high-frequency switching and synchronous rectification |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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