OGS110N20W 200V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
DC/DC Converter application
Ideal for high-frequency switching and synchronous rectification
- Description
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Description
The OGS110N20W is a 200V N-Channel MOSFET utilizing advanced split gate trench technology for low gate charge and excellent on-resistance. It is 100% UIS and °”Vds tested, making it ideal for DC/DC converters and high-frequency switching applications.
OGS110N20W | |
| OGS110N20W 200V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 200 |
| BVdss (V) | 200 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 145 |
| IF (A) | 55 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 10656 |
| Coss Typ (pF) | 389 |
| Crss Typ (pF) | 16 |
| Pd (W) | 25 |
| VRRM (V) | 200 |
| TJ ( degC) | -55 |
Features | |
| Advanced Split Gate Trench Technology | |
| Excellent RDS(ON) and Low Gate Charge | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
| DC/DC Converter application | |
| Ideal for high-frequency switching and synchronous rectification | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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