80V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
Load Switch Application
PWM Application
Power Management
- Description
- Reviews (0)
Description
The OGS120N08 is an 80V N-Channel MOSFET from HT, utilizing advanced split gate trench technology tOachieve excellent drain-source on-resistance (RDS(ON)) and low gate charge. This high-reliability component is 100% UIS and °”Vds tested, making it an ideal choice for power management, load switching, and PWM applications.
OGS120N08 | |
| 80V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 80 |
| BVdss (V) | 85 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 25 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 68 |
| VF @25 degC (V) | 1.1 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 40 |
| Coss Typ (pF) | 40 |
| Crss Typ (pF) | 40 |
| Pd (W) | 176 |
| VRRM (V) | 80 |
| TJ ( degC) | 25 |
Features | |
| Advanced Split Gate Trench Technology | |
| Excellent RDS(ON) and Low Gate Charge | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
| Load Switch Application | |
| PWM Application | |
| Power Management | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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