80V N-Channel MOSFET
$0
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
Load Switch Application
PWM Application
Power Management
- Description
- Reviews (0)
Description
The OGS120N08 is an 80V N-Channel MOSFET from HT, utilizing advanced split gate trench technology tOachieve excellent drain-source on-resistance (RDS(ON)) and low gate charge. This high-reliability component is 100% UIS and °”Vds tested, making it an ideal choice for power management, load switching, and PWM applications.
OGS120N08 |
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80V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
80 |
|
BVdss (V) |
85 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
25 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
68 |
|
VF @25 degC (V) |
1.1 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
40 |
|
Coss Typ (pF) |
40 |
|
Crss Typ (pF) |
40 |
|
Pd (W) |
176 |
|
VRRM (V) |
80 |
|
TJ ( degC) |
25 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
|
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100% UIS TESTED! |
|
|
100% °”Vds TESTED! |
|
|
Load Switch Application |
|
|
PWM Application |
|
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Power Management |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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