N-CHANNEL MOSFET
Low gate charge
Super Junction MOS
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
- Description
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Description
The OGS120N10 is an N-Channel MOSFET featuring Super Junction MOS technology for low gate charge and fast switching speeds. It is 100% avalanche tested and offers improved dv/dt capability, making it robust for power applications. This device supports a maximum drain-source voltage of 100V and continuous drain current up to 120A at 25°C. It is available in various standard packages including TO-220C, PDFN5*6, and TO-252.
OGS120N10 | |
| N-CHANNEL MOSFET | |
Property | Value |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | TO-220 |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 50 |
| VF @25 degC (V) | 1.2 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 25 |
| Coss Typ (pF) | 25 |
| Crss Typ (pF) | 25 |
| Pd (W) | 25 |
| TJ ( degC) | 0 |
Features | |
| Low gate charge | |
| Super Junction MOS | |
| Fast switching | |
| 100% avalanche tested | |
| Improved dv/dt capability | |
| RoHS product | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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