N-CHANNEL MOSFET
$0
Low gate charge
Super Junction MOS
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
- Description
- Reviews (0)
Description
The OGS120N10 is an N-Channel MOSFET featuring Super Junction MOS technology for low gate charge and fast switching speeds. It is 100% avalanche tested and offers improved dv/dt capability, making it robust for power applications. This device supports a maximum drain-source voltage of 100V and continuous drain current up to 120A at 25°C. It is available in various standard packages including TO-220C, PDFN5*6, and TO-252.
OGS120N10 |
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N-CHANNEL MOSFET |
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Property |
Value |
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BVdss (V) |
100 |
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Grade |
MOSFET |
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Package |
TO-220 |
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RDS(ON) (mOhm) |
10 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
50 |
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VF @25 degC (V) |
1.2 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
25 |
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Coss Typ (pF) |
25 |
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Crss Typ (pF) |
25 |
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Pd (W) |
25 |
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TJ ( degC) |
0 |
Features |
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Low gate charge |
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Super Junction MOS |
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Fast switching |
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100% avalanche tested |
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Improved dv/dt capability |
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RoHS product |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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