100V N-Channel MOSFET
$0
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS120N10F is a 100V N-Channel MOSFET that utilizes Advanced Split Gate Trench Technology tOprovide excellent RDS(ON) and low gate charge. It is 100% UIS and °”Vds tested, designed for efficiency in power management and switching applications.
OGS120N10F |
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100V N-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
100 |
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BVdss (V) |
100 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
10 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
0 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
0 |
|
Pd (W) |
25 |
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VRRM (V) |
100 |
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TJ ( degC) |
25 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
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100% °”Vds TESTED! |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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