100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
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Description
The OGS120N10F is a 100V N-Channel MOSFET that utilizes Advanced Split Gate Trench Technology tOprovide excellent RDS(ON) and low gate charge. It is 100% UIS and °”Vds tested, designed for efficiency in power management and switching applications.
OGS120N10F | |
| 100V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 0 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Pd (W) | 25 |
| VRRM (V) | 100 |
| TJ ( degC) | 25 |
Features | |
| Advanced Split Gate Trench Technology | |
| Excellent RDS(ON) and Low Gate Charge | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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