N-CHANNEL Power MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS120N15C is an N-Channel Power MOSFET utilizing advanced split gate trench technology tOachieve excellent on-resistance and low gate charge. This device is 100% UIS and delta Vds tested, making it well-suited for applications such as motor drives, UPS systems, and DC-DC converters.
OGS120N15C | |
| N-CHANNEL Power MOSFET | |
Property | Value |
| BVdss (V) | 150 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 75 |
| VF @25 degC (V) | 0.6 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 75 |
| Coss Typ (pF) | 75 |
| Pd (W) | 192 |
| TJ ( degC) | 150 |
Features | |
| Advanced Split Gate Trench Technology | |
| Excellent RDS(ON) and Low Gate Charge | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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