N-CHANNEL Power MOSFET
$0
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS120N15C is an N-Channel Power MOSFET utilizing advanced split gate trench technology tOachieve excellent on-resistance and low gate charge. This device is 100% UIS and delta Vds tested, making it well-suited for applications such as motor drives, UPS systems, and DC-DC converters.
OGS120N15C |
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N-CHANNEL Power MOSFET |
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Property |
Value |
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BVdss (V) |
150 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
10 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
75 |
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VF @25 degC (V) |
0.6 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
75 |
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Coss Typ (pF) |
75 |
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Pd (W) |
192 |
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TJ ( degC) |
150 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
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100% °”Vds TESTED! |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.