OGS125N10 100V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
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Description
The OGS125N10 is a 100V N-Channel MOSFET that utilizes advanced Split Gate Trench Technology tOachieve high performance. It offers excellent on-state resistance (RDS(ON)) and low gate charge, making it ideal for applications such as load switching, PWM systems, and general power management.
OGS125N10 | |
| OGS125N10 100V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | TO-220 |
| RDS(ON) (mOhm) | 3 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 0 |
| IF (A) | 15 |
| ID @25 degC (A) | 10 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| VRRM (V) | 100 |
| TJ ( degC) | 25 |
Features | |
| Advanced Split Gate Trench Technology | |
| Excellent RDS(ON) and Low Gate Charge | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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