OGS130N04 N-CHANNEL MOSFET
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
- Description
- Reviews (0)
Description
The OGS130N04 is an N-channel MOSFET designed for isolated DC/DC converters in telecom and industrial applications, as well as synchronous rectification in DC/DC and AC/DC power systems. It features a high continuous drain current of 130A and a low typical drain-source on-state resistance of 1.90m°) at a gate-source voltage of 10V. The device is 100% avalanche tested tOensure reliability in demanding environments.
OGS130N04 |
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OGS130N04 N-CHANNEL MOSFET |
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Property |
Value |
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BVdss (V) |
40 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
1.9 |
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VTH @25 degC (V) |
0 |
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ID @25 degC (A) |
40 |
|
Ciss Typ (pF) |
11900 |
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Coss Typ (pF) |
1429 |
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Crss Typ (pF) |
261 |
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Pd (W) |
25 |
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TJ ( degC) |
25 |
Features |
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Low gate charge |
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Low Rdson |
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Fast switching |
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100% avalanche tested |
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Improved dv/dt capability |
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RoHS product |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.