OGS250N04F 40V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS250N04F is a 40V N-Channel MOSFET utilizing advanced split gate trench technology. It is designed tOoffer extremely low on-resistance and low gate charge, making it highly efficient for high-speed switching applications such as load switches, PWM, and power management.
OGS250N04F | |
| OGS250N04F 40V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 40 |
| BVdss (V) | 40 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 0 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 25 |
| VRRM (V) | 40 |
| TJ ( degC) | -55 |
Features | |
| Advanced Split Gate Trench Technology | |
| Excellent RDS(ON) and Low Gate Charge | |
| 100% UIS TESTED! | |
| 100% °”Vds TESTED! | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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