OGS250N04F 40V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS250N04F is a 40V N-Channel MOSFET utilizing advanced split gate trench technology. It is designed tOoffer extremely low on-resistance and low gate charge, making it highly efficient for high-speed switching applications such as load switches, PWM, and power management.
OGS250N04F |
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OGS250N04F 40V N-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
40 |
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BVdss (V) |
40 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
10 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
0 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
0 |
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Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
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Pd (W) |
25 |
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VRRM (V) |
40 |
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TJ ( degC) |
-55 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
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100% °”Vds TESTED! |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.