Description

Advanced Split Gate Trench T echnology Excellent RDS(ON) and Low Gate Charge 100% UIS TESTED! 100% Vds TESTED! The OGS248N15L is a 150V N-channel MOSFET featuring advanced Split Gate Trench technology, extremely low on resistance (4.15mOhm max) and low gate charge. Ideal for load switch, PWM, and power management.

OGS248N15L

OGS248N15L 150V

 

Property

Value

Vrrm (V)

150

BVdss (V)

150

Grade

MOSFET

Package

ABS

RDS(ON) (mOhm)

4.15

ID @25 degC (A)

248

VGS(th) Typ (V)

4.5

Pd (W)

481

VGS(th) MIN (V)

2.9

VRRM (V)

150

TJ ( degC)

150

Features

Applications

Power Management, Switching Circuits, Motor Drives

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