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Description
Advanced Split Gate Trench T echnology Excellent RDS(ON) and Low Gate Charge 100% UIS TESTED! 100% Vds TESTED! The OGS248N15L is a 150V N-channel MOSFET featuring advanced Split Gate Trench technology, extremely low on resistance (4.15mOhm max) and low gate charge. Ideal for load switch, PWM, and power management.
OGS248N15L | |
| OGS248N15L 150V | |
Property | Value |
| Vrrm (V) | 150 |
| BVdss (V) | 150 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 4.15 |
| ID @25 degC (A) | 248 |
| VGS(th) Typ (V) | 4.5 |
| Pd (W) | 481 |
| VGS(th) MIN (V) | 2.9 |
| VRRM (V) | 150 |
| TJ ( degC) | 150 |
Features | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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