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Description
Advanced Split Gate Trench T echnology Excellent RDS(ON) and Low Gate Charge 100% UIS TESTED! 100% Vds TESTED! The OGS248N15L is a 150V N-channel MOSFET featuring advanced Split Gate Trench technology, extremely low on resistance (4.15mOhm max) and low gate charge. Ideal for load switch, PWM, and power management.
OGS248N15L |
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OGS248N15L 150V |
|
Property |
Value |
|
Vrrm (V) |
150 |
|
BVdss (V) |
150 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
4.15 |
|
ID @25 degC (A) |
248 |
|
VGS(th) Typ (V) |
4.5 |
|
Pd (W) |
481 |
|
VGS(th) MIN (V) |
2.9 |
|
VRRM (V) |
150 |
|
TJ ( degC) |
150 |
Features |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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