OGS3080 30V N-channel MOSFET
$0
Extremely Low RDS(on): 3.8m mOhm @VGS=10 V, Id=40 A
Good stability and uniformity
100% avalanche tested
Excellent package for good heat dissipation
- Description
- Reviews (0)
Description
The 3080 uses advanced trench Typ.RDS(on) = 3.8 mmOhm technology tOprovide excellent RDS(ON), low gate charge This device is suitable for use in UPS, power switching and general purpose applications.
OGS3080 |
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OGS3080 30V N-channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
30 |
|
BVdss (V) |
30 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
3.8 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
15 |
|
IF (A) |
60 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
1800 |
|
Coss Typ (pF) |
240 |
|
Crss Typ (pF) |
210 |
|
Pd (W) |
25 |
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VRRM (V) |
30 |
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TJ ( degC) |
-55 |
Features |
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Extremely Low RDS(on): 3.8m mOhm @VGS=10 V, Id=40 A |
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Good stability and uniformity |
|
|
100% avalanche tested |
|
|
Excellent package for good heat dissipation |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
There are no reviews yet.