OGS3080 30V N-channel MOSFET
Extremely Low RDS(on): 3.8m mOhm @VGS=10 V, Id=40 A
Good stability and uniformity
100% avalanche tested
Excellent package for good heat dissipation
- Description
- Reviews (0)
Description
The 3080 uses advanced trench Typ.RDS(on) = 3.8 mmOhm technology tOprovide excellent RDS(ON), low gate charge This device is suitable for use in UPS, power switching and general purpose applications.
OGS3080 | |
| OGS3080 30V N-channel MOSFET | |
Property | Value |
| Vrrm (V) | 30 |
| BVdss (V) | 30 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 3.8 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 15 |
| IF (A) | 60 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 1800 |
| Coss Typ (pF) | 240 |
| Crss Typ (pF) | 210 |
| Pd (W) | 25 |
| VRRM (V) | 30 |
| TJ ( degC) | -55 |
Features | |
| Extremely Low RDS(on): 3.8m mOhm @VGS=10 V, Id=40 A | |
| Good stability and uniformity | |
| 100% avalanche tested | |
| Excellent package for good heat dissipation | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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