OGS30N03 N-CHANNEL Power MOSFET
RDS(ON) < 8.5 mmOhm @ VGS=10V, ID=15A
Low capacitance
Low gate charge
Fast switching capability
Avalanche energy specified
- Description
- Reviews (0)
Description
The HGS30N03 uses advanced trench technology tOprovide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
OGS30N03 | |
| OGS30N03 N-CHANNEL Power MOSFET | |
Property | Value |
| BVdss (V) | 30 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 8.5 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 130 |
| IF (A) | 15 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 1024 |
| Coss Typ (pF) | 400 |
| Crss Typ (pF) | 165 |
| Pd (W) | -8 |
| TJ ( degC) | 25 |
Features | |
| RDS(ON) < 8.5 mmOhm @ VGS=10V, ID=15A | |
| Low capacitance | |
| Low gate charge | |
| Fast switching capability | |
| Avalanche energy specified | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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