OGS30N03 N-CHANNEL Power MOSFET
$0
RDS(ON) < 8.5 mmOhm @ VGS=10V, ID=15A
Low capacitance
Low gate charge
Fast switching capability
Avalanche energy specified
- Description
- Reviews (0)
Description
The HGS30N03 uses advanced trench technology tOprovide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
OGS30N03 |
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OGS30N03 N-CHANNEL Power MOSFET |
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Property |
Value |
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BVdss (V) |
30 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
8.5 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
130 |
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IF (A) |
15 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
1024 |
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Coss Typ (pF) |
400 |
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Crss Typ (pF) |
165 |
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Pd (W) |
-8 |
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TJ ( degC) |
25 |
Features |
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RDS(ON) < 8.5 mmOhm @ VGS=10V, ID=15A |
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Low capacitance |
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Low gate charge |
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Fast switching capability |
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Avalanche energy specified |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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