60V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 50nC (Typ.).
VDSS= 60V, ID=30A
RDS(on) : 0.030 mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
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Description
The OGS30N06V is a 60V N-Channel MOSFET designed for high-performance switching and power management applications. It features low intrinsic capacitance, excellent switching characteristics, and an extended safe operating area, making it suitable for a wide range of industrial and consumer electronics. Housed in a TO-251 package, it supports a continuous drain current of 30A and a maximum junction temperature of 175°C.
OGS30N06V | |
| 60V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 60 |
| BVdss (V) | 60 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 0.03 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 50 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 15 PF |
| Coss Typ (pF) | 15 PF |
| Crss Typ (pF) | 15 PF |
| Pd (W) | 45 |
| VRRM (V) | 60 |
| TJ ( degC) | 175 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 50nC (Typ.). | |
| VDSS= 60V, ID=30A | |
| RDS(on) : 0.030 mOhm (Max) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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