60V N-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 50nC (Typ.).
VDSS= 60V, ID=30A
RDS(on) : 0.030 mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OGS30N06V is a 60V N-Channel MOSFET designed for high-performance switching and power management applications. It features low intrinsic capacitance, excellent switching characteristics, and an extended safe operating area, making it suitable for a wide range of industrial and consumer electronics. Housed in a TO-251 package, it supports a continuous drain current of 30A and a maximum junction temperature of 175°C.
OGS30N06V |
|
|
60V N-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
60 |
|
BVdss (V) |
60 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
0.03 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
50 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
15 PF |
|
Coss Typ (pF) |
15 PF |
|
Crss Typ (pF) |
15 PF |
|
Pd (W) |
45 |
|
VRRM (V) |
60 |
|
TJ ( degC) |
175 |
Features |
|
|
Low Intrinsic Capacitances. |
|
|
Excellent Switching Characteristics. |
|
|
Extended Safe Operating Area. |
|
|
Unrivalled Gate Charge :Qg= 50nC (Typ.). |
|
|
VDSS= 60V, ID=30A |
|
|
RDS(on) : 0.030 mOhm (Max) @VG=10V |
|
|
100% Avalanche Tested |
|
Applications |
|
|
Power Management, Switching Circuits, Motor Drives |
|
Reviews
There are no reviews yet.