100V N-Channel MOSFET

$0

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 31nC (Typ.).
BVDSS=100V,ID= 30A
RDS(on) : 0.07mOhm (Max) @VG=10V
100% Avalanche Tested

SKU: OGS30N10 Category: MOSFETs & Power Transistors

Description

The OGS30N10 is a high-performance 100V N-Channel MOSFET featuring low intrinsic capacitances and excellent switching characteristics. It provides an extended safe operating area and has been 100% avalanche tested, making it ideal for efficient power management applications.

OGS30N10

100V N-Channel MOSFET

 

Property

Value

Vrrm (V)

100

BVdss (V)

100

Grade

MOSFET

Package

ABS

RDS(ON) (mOhm)

0.07

VTH @25 degC (V)

0

Qg (nC)

31

ID @25 degC (A)

0

Ciss Typ (pF)

25 PF

Coss Typ (pF)

25 PF

Crss Typ (pF)

25 PF

Pd (W)

55

VRRM (V)

100

TJ ( degC)

-55

Features

Low Intrinsic Capacitances.

Excellent Switching Characteristics.

Extended Safe Operating Area.

Unrivalled Gate Charge :Qg= 31nC (Typ.).

BVDSS=100V,ID= 30A

RDS(on) : 0.07mOhm (Max) @VG=10V

100% Avalanche Tested

Applications

Power Management, Switching Circuits, Motor Drives

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