100V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 31nC (Typ.).
BVDSS=100V,ID= 30A
RDS(on) : 0.07mOhm (Max) @VG=10V
100% Avalanche Tested
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Description
The OGS30N10 is a high-performance 100V N-Channel MOSFET featuring low intrinsic capacitances and excellent switching characteristics. It provides an extended safe operating area and has been 100% avalanche tested, making it ideal for efficient power management applications.
OGS30N10 | |
| 100V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 100 |
| BVdss (V) | 100 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 0.07 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 31 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 25 PF |
| Coss Typ (pF) | 25 PF |
| Crss Typ (pF) | 25 PF |
| Pd (W) | 55 |
| VRRM (V) | 100 |
| TJ ( degC) | -55 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 31nC (Typ.). | |
| BVDSS=100V,ID= 30A | |
| RDS(on) : 0.07mOhm (Max) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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