- Description
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Description
RDS(ON) < 16mOhm @ VGS = 10V (T yp:13mOhm) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability 100% UIS TESTED! 100% Vds TESTED! The OGS58N06R is a 60V N-channel MOSFET with ultra-low on resistance (16mOhm max) and high ESD capability. Ideal for power switching, LED backlighting, and UPS.
OGS58N06R |
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OGS58N06R 60V N-Channel |
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Property |
Value |
|
Vrrm (V) |
60 |
|
BVdss (V) |
60 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
16 |
|
ID @25 degC (A) |
58 |
|
VGS(th) Typ (V) |
3 |
|
Pd (W) |
85 |
|
VGS(th) MIN (V) |
2 |
|
VGS(th) MAX (V) |
4 |
|
VRRM (V) |
60 |
|
TJ ( degC) |
175 |
Features |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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