OGS6080 68V N-channel MOSFET
Extremely Low RDS(on): Typ.RDS(on) = 7.0m°) @VGS=10 V,Id=40 A
Low gate charge ( typical 75 nC)
Fast switching
100% avalanche tested
- Description
- Reviews (0)
Description
The 6080D uses advanced trench Technology and design tOprovide excellent RDS(ON) with low gate charge. It can be use in a wide variety of applications.
OGS6080 | |
| OGS6080 68V N-channel MOSFET | |
Property | Value |
| Vrrm (V) | 68 |
| BVdss (V) | 60 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 7 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 35 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 3899 |
| Coss Typ (pF) | 321 |
| Crss Typ (pF) | 303 |
| Pd (W) | 25 |
| VRRM (V) | 68 |
| TJ ( degC) | -55 |
Features | |
| Extremely Low RDS(on): Typ.RDS(on) = 7.0m°) @VGS=10 V,Id=40 A | |
| Low gate charge ( typical 75 nC) | |
| Fast switching | |
| 100% avalanche tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
There are no reviews yet.