OGS6080 68V N-channel MOSFET
$0
Extremely Low RDS(on): Typ.RDS(on) = 7.0m°) @VGS=10 V,Id=40 A
Low gate charge ( typical 75 nC)
Fast switching
100% avalanche tested
- Description
- Reviews (0)
Description
The 6080D uses advanced trench Technology and design tOprovide excellent RDS(ON) with low gate charge. It can be use in a wide variety of applications.
OGS6080 |
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OGS6080 68V N-channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
68 |
|
BVdss (V) |
60 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
7 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
35 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
3899 |
|
Coss Typ (pF) |
321 |
|
Crss Typ (pF) |
303 |
|
Pd (W) |
25 |
|
VRRM (V) |
68 |
|
TJ ( degC) |
-55 |
Features |
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Extremely Low RDS(on): Typ.RDS(on) = 7.0m°) @VGS=10 V,Id=40 A |
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|
Low gate charge ( typical 75 nC) |
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|
Fast switching |
|
|
100% avalanche tested |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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