OGS60N030 N-Channel Trench Power
$0
VDS =30V,ID =60A
RDS(ON)=4.0mmOhm (typical) @ VGS=10V
RDS(ON)=5.8mmOhm (typical) @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
ESD protection : HBM Class 2
- Description
- Reviews (0)
Description
The OGS60N030 uses Trench technology that is uniquely optimized tOprovide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. It is ESD protested.
OGS60N030 |
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OGS60N030 N-Channel Trench Power |
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Property |
Value |
|
BVdss (V) |
0 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
4 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
38 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
2640 |
|
Coss Typ (pF) |
906 |
|
Crss Typ (pF) |
27 |
|
Pd (W) |
48 |
|
TJ ( degC) |
25 |
Features |
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|
VDS =30V,ID =60A |
|
|
RDS(ON)=4.0mmOhm (typical) @ VGS=10V |
|
|
RDS(ON)=5.8mmOhm (typical) @ VGS=4.5V |
|
|
Excellent gate charge x RDS(on) product(FOM) |
|
|
Very low on-resistance RDS(on) |
|
|
150 °C operating temperature |
|
|
Pb-free lead plating |
|
|
100% UIS tested |
|
|
ESD protection : HBM Class 2 |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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