OGS60N030 N-Channel Trench Power

$0

VDS =30V,ID =60A
RDS(ON)=4.0mmOhm (typical) @ VGS=10V
RDS(ON)=5.8mmOhm (typical) @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
ESD protection : HBM Class 2

SKU: OGS60N030 Category: MOSFETs & Power Transistors

Description

The OGS60N030 uses Trench technology that is uniquely optimized tOprovide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. It is ESD protested.

OGS60N030

OGS60N030 N-Channel Trench Power

 

Property

Value

BVdss (V)

0

Grade

MOSFET

Package

ABS

RDS(ON) (mOhm)

4

VTH @25 degC (V)

0

Qg (nC)

38

IF (A)

25

ID @25 degC (A)

0

Ciss Typ (pF)

2640

Coss Typ (pF)

906

Crss Typ (pF)

27

Pd (W)

48

TJ ( degC)

25

Features

VDS =30V,ID =60A

RDS(ON)=4.0mmOhm (typical) @ VGS=10V

RDS(ON)=5.8mmOhm (typical) @ VGS=4.5V

Excellent gate charge x RDS(on) product(FOM)

Very low on-resistance RDS(on)

150 °C operating temperature

Pb-free lead plating

100% UIS tested

ESD protection : HBM Class 2

Applications

Power Management, Switching Circuits, Motor Drives

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