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Description
120V, 90A RDS(ON) T yp = 7.1mOhm @ VGS = 10V Advanced Split Gate Trench T echnology Excellent RDS(ON) and Low Gate Charge 100% UIS TESTED! 100% Vds TESTED! The OGS90N12C is a 120V N-channel MOSFET with low on resistance (9.3mOhm max @10V) and advanced Split Gate Trench technology. Ideal for load switch, PWM, and power management.
OGS90N12C |
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OGS90N12C 120V |
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Property |
Value |
|
Vrrm (V) |
120 |
|
BVdss (V) |
120 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
9.3 |
|
ID @25 degC (A) |
90 |
|
VGS(th) Typ (V) |
3 |
|
Pd (W) |
132 |
|
VGS(th) MIN (V) |
2.4 |
|
VGS(th) MAX (V) |
3.6 |
|
VRRM (V) |
120 |
|
TJ ( degC) |
150 |
Features |
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Applications |
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|
Power Management, Switching Circuits, Motor Drives |
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Reviews
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