120V N-Channel MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS90N12F is a 120V N-Channel MOSFET utilizing advanced split gate trench technology to achieve excellent RDS(ON) and low gate charge. Designed for efficient performance in power management, load switching, and PWM applications, this device is 100% UIS and °”Vds tested for high reliability.
OGS90N12F |
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120V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
120 |
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BVdss (V) |
120 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
3 |
|
VTH @25 degC (V) |
0 |
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Qg (nC) |
0 |
|
IF (A) |
15 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
|
Pd (W) |
25 |
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VRRM (V) |
120 |
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TJ ( degC) |
25 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
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100% °”Vds TESTED! |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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