100V N-Channel MOSFET
$0
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
- Description
- Reviews (0)
Description
The OGS92N10F is a 100V N-Channel MOSFET featuring advanced split gate trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for applications like load switching, PWM control, and power management. It is 100% UIS and °”Vds tested for high reliability.
OGS92N10F |
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100V N-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
100 |
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BVdss (V) |
100 |
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Grade |
MOSFET |
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Package |
ABS |
|
RDS(ON) (mOhm) |
10 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
0 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
|
Pd (W) |
25 |
|
VRRM (V) |
100 |
|
TJ ( degC) |
25 |
Features |
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Advanced Split Gate Trench Technology |
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Excellent RDS(ON) and Low Gate Charge |
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100% UIS TESTED! |
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100% °”Vds TESTED! |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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