OMT2301T
$0
TrenchFET Power MOSFET
Unrivalled Gate Charge :Qg= 5.5 nC (Typ.)
BVDSS=-20V,ID=-2.0A
RDS(on) :0.14mOhm (Max) @VG=4.5V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OMT2301T is a -20V P-Channel TrenchFET power MOSFET featuring low gate charge and low on-resistance. Housed in a compact SOT-523 package, it is 100% avalanche tested and optimized for power management and efficient load switching in space-constrained applications.
OMT2301T |
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OMT2301T |
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Property |
Value |
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BVdss (V) |
-20 |
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Grade |
MOSFET |
|
Package |
100 |
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RDS(ON) (mOhm) |
0.14 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
10 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
405 |
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Coss Typ (pF) |
75 |
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Crss Typ (pF) |
55 |
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Pd (W) |
0.25 |
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TJ ( degC) |
150 |
Features |
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TrenchFET Power MOSFET |
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Unrivalled Gate Charge :Qg= 5.5 nC (Typ.) |
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BVDSS=-20V,ID=-2.0A |
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RDS(on) :0.14mOhm (Max) @VG=4.5V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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