OMT2301T
TrenchFET Power MOSFET
Unrivalled Gate Charge :Qg= 5.5 nC (Typ.)
BVDSS=-20V,ID=-2.0A
RDS(on) :0.14mOhm (Max) @VG=4.5V
100% Avalanche Tested
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Description
The OMT2301T is a -20V P-Channel TrenchFET power MOSFET featuring low gate charge and low on-resistance. Housed in a compact SOT-523 package, it is 100% avalanche tested and optimized for power management and efficient load switching in space-constrained applications.
OMT2301T | |
| OMT2301T | |
Property | Value |
| BVdss (V) | -20 |
| Grade | MOSFET |
| Package | 100 |
| RDS(ON) (mOhm) | 0.14 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 10 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 405 |
| Coss Typ (pF) | 75 |
| Crss Typ (pF) | 55 |
| Pd (W) | 0.25 |
| TJ ( degC) | 150 |
Features | |
| TrenchFET Power MOSFET | |
| Unrivalled Gate Charge :Qg= 5.5 nC (Typ.) | |
| BVDSS=-20V,ID=-2.0A | |
| RDS(on) :0.14mOhm (Max) @VG=4.5V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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