OiC8S65DA2 Silicon Carbide Schottky
$0
650-Volt SiC JBS Rectifier
ZerOReverse Recovery
Positive Temperature Coefficient on VF
Temperature-Independent Switching Behavior
Extremely Fast Switching
Extremely Low Leakage Current
- Description
- Reviews (0)
Description
The OiC8S65DA2 is a high-performance 650V, 8A Silicon Carbide (SiC) Schottky Diode featuring zero reverse recovery and extremely low leakage current. It offers a positive temperature coefficient on forward voltage and temperature-independent switching behavior, making it ideal for high-efficiency applications such as solar inverters, switch-mode power supplies, uninterruptible power supplies, and power factor correction circuits.
OiC8S65DA2 |
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OiC8S65DA2 Silicon Carbide Schottky |
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Property |
Value |
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Vrrm (V) |
650 |
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Grade |
Rectifier |
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IF (A) |
1.38 |
|
IFSM (A) |
59 |
|
VF @25 degC (V) |
1.38 |
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VF @175 degC (V) |
1.7 |
|
IR @25 degC (μA) |
1 |
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IR @175 degC (μA) |
8 |
|
VRRM (V) |
650 |
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VF (V) |
1.38 |
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IR (μA) |
650 |
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TJ ( degC) |
25 |
Features |
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650-Volt SiC JBS Rectifier |
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ZerOReverse Recovery |
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Positive Temperature Coefficient on VF |
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Temperature-Independent Switching Behavior |
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Extremely Fast Switching |
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Extremely Low Leakage Current |
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Applications |
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Power Supply, AC/DC Conversion, Rectification Circuits |
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Reviews
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