OiC8S65DA2 Silicon Carbide Schottky
650-Volt SiC JBS Rectifier
ZerOReverse Recovery
Positive Temperature Coefficient on VF
Temperature-Independent Switching Behavior
Extremely Fast Switching
Extremely Low Leakage Current
- Description
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Description
The OiC8S65DA2 is a high-performance 650V, 8A Silicon Carbide (SiC) Schottky Diode featuring zero reverse recovery and extremely low leakage current. It offers a positive temperature coefficient on forward voltage and temperature-independent switching behavior, making it ideal for high-efficiency applications such as solar inverters, switch-mode power supplies, uninterruptible power supplies, and power factor correction circuits.
OiC8S65DA2 | |
| OiC8S65DA2 Silicon Carbide Schottky | |
Property | Value |
| Vrrm (V) | 650 |
| Grade | Rectifier |
| IF (A) | 1.38 |
| IFSM (A) | 59 |
| VF @25 degC (V) | 1.38 |
| VF @175 degC (V) | 1.7 |
| IR @25 degC (μA) | 1 |
| IR @175 degC (μA) | 8 |
| VRRM (V) | 650 |
| VF (V) | 1.38 |
| IR (μA) | 650 |
| TJ ( degC) | 25 |
Features | |
| 650-Volt SiC JBS Rectifier | |
| ZerOReverse Recovery | |
| Positive Temperature Coefficient on VF | |
| Temperature-Independent Switching Behavior | |
| Extremely Fast Switching | |
| Extremely Low Leakage Current | |
Applications | |
| Power Supply, AC/DC Conversion, Rectification Circuits | |
Reviews
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