Silicon Carbide Schottky Diode
$0
650-Volt SiC JBS Rectifier
ZerOReverse Recovery
Positive Temperature Coefficient on VF
Temperature-Independent Switching Behavior
Extremely Fast Switching
Extremely Low Leakage Current Silicon Carbide diodes use a new technology with lower loss, higher switching performance and
- Description
- Reviews (0)
Description
higher reliability compared tOsilicon, which allow the power converter tOhave a higher power density and improve system efficiency. SiC diodes can be easily paralleled tOmeet various application demands, without concern of thermal runaway.
OiC10S65R2 |
|
|
Silicon Carbide Schottky Diode |
|
Property |
Value |
|
Vrrm (V) |
650 |
|
Grade |
Rectifier |
|
IF (A) |
36 |
|
IFSM (A) |
35 |
|
VF @25 degC (V) |
1.35 |
|
VF @175 degC (V) |
1.64 |
|
IR @25 degC (μA) |
1.05 |
|
IR @175 degC (μA) |
5.72 |
|
Pd (W) |
146 |
|
VRRM (V) |
650 |
|
VF (V) |
1.35 |
|
IR (μA) |
650 |
|
TJ ( degC) |
25 |
Features |
|
|
650-Volt SiC JBS Rectifier |
|
|
ZerOReverse Recovery |
|
|
Positive Temperature Coefficient on VF |
|
|
Temperature-Independent Switching Behavior |
|
|
Extremely Fast Switching |
|
|
Extremely Low Leakage Current Silicon Carbide diodes use a new technology with lower loss, higher switching performance and |
|
Applications |
|
|
Power Supply, AC/DC Conversion, Rectification Circuits |
|
Reviews
There are no reviews yet.