Silicon Carbide Schottky Diode
650-Volt SiC JBS Rectifier
ZerOReverse Recovery
Positive Temperature Coefficient on VF
Temperature-Independent Switching Behavior
Extremely Fast Switching
Extremely Low Leakage Current Silicon Carbide diodes use a new technology with lower loss, higher switching performance and
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Description
higher reliability compared tOsilicon, which allow the power converter tOhave a higher power density and improve system efficiency. SiC diodes can be easily paralleled tOmeet various application demands, without concern of thermal runaway.
OiC10S65R2 | |
| Silicon Carbide Schottky Diode | |
Property | Value |
| Vrrm (V) | 650 |
| Grade | Rectifier |
| IF (A) | 36 |
| IFSM (A) | 35 |
| VF @25 degC (V) | 1.35 |
| VF @175 degC (V) | 1.64 |
| IR @25 degC (μA) | 1.05 |
| IR @175 degC (μA) | 5.72 |
| Pd (W) | 146 |
| VRRM (V) | 650 |
| VF (V) | 1.35 |
| IR (μA) | 650 |
| TJ ( degC) | 25 |
Features | |
| 650-Volt SiC JBS Rectifier | |
| ZerOReverse Recovery | |
| Positive Temperature Coefficient on VF | |
| Temperature-Independent Switching Behavior | |
| Extremely Fast Switching | |
| Extremely Low Leakage Current Silicon Carbide diodes use a new technology with lower loss, higher switching performance and | |
Applications | |
| Power Supply, AC/DC Conversion, Rectification Circuits | |
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