OT25N120W N-CHANNEL IGBT
$0
Low gate charge
Trench FS Technology
Saturation voltage: Vce(sat), typ = 1.9V at Ic = 25A and Tc = 25°C
RoHS compliant product
- Description
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Description
The OT25N120W is an N-Channel Insulated Gate Bipolar Transistor (IGBT) utilizing Trench FS technology. It is designed for high-efficiency power conversion applications like general-purpose inverters and Uninterruptible Power Supplies (UPS), offering low gate charge and a typical saturation voltage of 1.9V at 25A.
OT25N120W |
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OT25N120W N-CHANNEL IGBT |
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Property |
Value |
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BVCEs (V) |
250 |
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Grade |
IGBT |
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Package |
ABS |
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Qg (nC) |
600 |
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VCE(sat) Typ (V) |
1.9 |
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ID @25 degC (A) |
120 |
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Pd (W) |
25 |
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TJ ( degC) |
55 |
Features |
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Low gate charge |
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Trench FS Technology |
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Saturation voltage: Vce(sat), typ = 1.9V at Ic = 25A and Tc = 25°C |
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RoHS compliant product |
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Applications |
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Motor Control, Inverters, Power Conversion Systems |
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