OT25N120W N-CHANNEL IGBT
Low gate charge
Trench FS Technology
Saturation voltage: Vce(sat), typ = 1.9V at Ic = 25A and Tc = 25°C
RoHS compliant product
- Description
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Description
The OT25N120W is an N-Channel Insulated Gate Bipolar Transistor (IGBT) utilizing Trench FS technology. It is designed for high-efficiency power conversion applications like general-purpose inverters and Uninterruptible Power Supplies (UPS), offering low gate charge and a typical saturation voltage of 1.9V at 25A.
OT25N120W | |
| OT25N120W N-CHANNEL IGBT | |
Property | Value |
| BVCEs (V) | 250 |
| Grade | IGBT |
| Package | ABS |
| Qg (nC) | 600 |
| VCE(sat) Typ (V) | 1.9 |
| ID @25 degC (A) | 120 |
| Pd (W) | 25 |
| TJ ( degC) | 55 |
Features | |
| Low gate charge | |
| Trench FS Technology | |
| Saturation voltage: Vce(sat), typ = 1.9V at Ic = 25A and Tc = 25°C | |
| RoHS compliant product | |
Applications | |
| Motor Control, Inverters, Power Conversion Systems | |
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