OT25T120W N-CHANNEL IGBT
$0
Low gate charge
Trench FS Technology
Saturation voltage: Vce(sat), typ = 1.9V (Ic = 25A and Tc = 25°C)
RoHS product OT25T120W is an N-channel insulated gate bipolar transistor (IGBT) using Trench Field-Stop (FS) technology. It is characterized by low gate charge and low saturation voltage, making it suitable for applications such as general purpose inverters and UPS systems.
- Description
- Reviews (0)
Description
and Tc = 25°C) RoHS product OT25T120W is an N-channel insulated gate bipolar transistor (IGBT) using Trench Field-Stop (FS) technology. It is characterized by low gate charge and low saturation voltage, making it suitable for applications such as general purpose inverters and UPS systems.
OT25T120W |
|
|
OT25T120W N-CHANNEL IGBT |
|
Property |
Value |
|
BVCEs (V) |
250 |
|
Grade |
IGBT |
|
Package |
ABS |
|
Qg (nC) |
600 |
|
VCE(sat) Typ (V) |
1.9 |
|
ID @25 degC (A) |
120 |
|
Pd (W) |
25 |
|
TJ ( degC) |
-55 |
Features |
|
|
Low gate charge |
|
|
Trench FS Technology |
|
|
Saturation voltage: Vce(sat), typ = 1.9V (Ic = 25A and Tc = 25°C) |
|
|
RoHS product OT25T120W is an N-channel insulated gate bipolar transistor (IGBT) using Trench Field-Stop (FS) technology. It is characterized by low gate charge and low saturation voltage, making it suitable for applications such as general purpose inverters and UPS systems. |
|
Applications |
|
|
Motor Control, Inverters, Power Conversion Systems |
|
Reviews
There are no reviews yet.