OT25T120W N-CHANNEL IGBT
Low gate charge
Trench FS Technology
Saturation voltage: Vce(sat), typ = 1.9V (Ic = 25A and Tc = 25°C)
RoHS product OT25T120W is an N-channel insulated gate bipolar transistor (IGBT) using Trench Field-Stop (FS) technology. It is characterized by low gate charge and low saturation voltage, making it suitable for applications such as general purpose inverters and UPS systems.
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Description
and Tc = 25°C) RoHS product OT25T120W is an N-channel insulated gate bipolar transistor (IGBT) using Trench Field-Stop (FS) technology. It is characterized by low gate charge and low saturation voltage, making it suitable for applications such as general purpose inverters and UPS systems.
OT25T120W | |
| OT25T120W N-CHANNEL IGBT | |
Property | Value |
| BVCEs (V) | 250 |
| Grade | IGBT |
| Package | ABS |
| Qg (nC) | 600 |
| VCE(sat) Typ (V) | 1.9 |
| ID @25 degC (A) | 120 |
| Pd (W) | 25 |
| TJ ( degC) | -55 |
Features | |
| Low gate charge | |
| Trench FS Technology | |
| Saturation voltage: Vce(sat), typ = 1.9V (Ic = 25A and Tc = 25°C) | |
| RoHS product OT25T120W is an N-channel insulated gate bipolar transistor (IGBT) using Trench Field-Stop (FS) technology. It is characterized by low gate charge and low saturation voltage, making it suitable for applications such as general purpose inverters and UPS systems. | |
Applications | |
| Motor Control, Inverters, Power Conversion Systems | |
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