OTS120N04C 40V N-Channel MOSFET
Advanced Trench Technology
Excellent Switching Characteristics
Extended Safe Operating Area
Ultra Low Gate Charge:Qg=12nC (Typ.)
VDSS=40V, ID=120A
Rds(on):2.3mmOhm (Typ.) @VG=10V
100% Avalanche Tested
- Description
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Description
The OTS120N04C is a 40V N-Channel MOSFET that utilizes advanced trench technology tOprovide excellent switching performance and an extended safe operating area. It is characterized by an ultra-low gate charge of 12nC (typical) and a low on-resistance of 1.8mmOhm at VGS=10V. This device is 100% avalanche tested and is suitable for a variety of power conversion and management applications where high efficiency and reliability are required.
OTS120N04C | |
| OTS120N04C 40V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 40 |
| BVdss (V) | 40 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 2.3 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 12 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 20 |
| Coss Typ (pF) | 20 |
| Crss Typ (pF) | 20 |
| Pd (W) | 25 |
| VRRM (V) | 40 |
| TJ ( degC) | 25 |
Features | |
| Advanced Trench Technology | |
| Excellent Switching Characteristics | |
| Extended Safe Operating Area | |
| Ultra Low Gate Charge:Qg=12nC (Typ.) | |
| VDSS=40V, ID=120A | |
| Rds(on):2.3mmOhm (Typ.) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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