OTS120N04C 40V N-Channel MOSFET
$0
Advanced Trench Technology
Excellent Switching Characteristics
Extended Safe Operating Area
Ultra Low Gate Charge:Qg=12nC (Typ.)
VDSS=40V, ID=120A
Rds(on):2.3mmOhm (Typ.) @VG=10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OTS120N04C is a 40V N-Channel MOSFET that utilizes advanced trench technology tOprovide excellent switching performance and an extended safe operating area. It is characterized by an ultra-low gate charge of 12nC (typical) and a low on-resistance of 1.8mmOhm at VGS=10V. This device is 100% avalanche tested and is suitable for a variety of power conversion and management applications where high efficiency and reliability are required.
OTS120N04C |
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OTS120N04C 40V N-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
40 |
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BVdss (V) |
40 |
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Grade |
MOSFET |
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Package |
ABS |
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RDS(ON) (mOhm) |
2.3 |
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VTH @25 degC (V) |
0 |
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Qg (nC) |
12 |
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IF (A) |
25 |
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ID @25 degC (A) |
0 |
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Ciss Typ (pF) |
20 |
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Coss Typ (pF) |
20 |
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Crss Typ (pF) |
20 |
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Pd (W) |
25 |
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VRRM (V) |
40 |
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TJ ( degC) |
25 |
Features |
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Advanced Trench Technology |
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Excellent Switching Characteristics |
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Extended Safe Operating Area |
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Ultra Low Gate Charge:Qg=12nC (Typ.) |
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VDSS=40V, ID=120A |
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Rds(on):2.3mmOhm (Typ.) @VG=10V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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