OTS120N04R 40V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 75nC (Typ.).
BVDSS=40V,ID=120A
RDS(on) : 2.3mmOhm (Typ ) @VG=10V
100% Avalanche Tested
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Description
The OTS120N04R is a 40V N-Channel MOSFET designed for efficient power switching. It features low intrinsic capacitances and excellent switching characteristics, alongside an extended safe operating area. This 100% avalanche-tested device provides high reliability with a low typical on-resistance of 2.3mmOhm and is housed in a compact TO-252 package.
OTS120N04R | |
| OTS120N04R 40V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 40 |
| BVdss (V) | 40 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 2.3 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 75 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 20 PF |
| Coss Typ (pF) | 20 PF |
| Crss Typ (pF) | 20 PF |
| Pd (W) | 25 |
| VRRM (V) | 40 |
| TJ ( degC) | 25 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 75nC (Typ.). | |
| BVDSS=40V,ID=120A | |
| RDS(on) : 2.3mmOhm (Typ ) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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