OTS120N04R 40V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 75nC (Typ.).
BVDSS=40V,ID=120A
RDS(on) : 2.3mmOhm (Typ ) @VG=10V
100% Avalanche Tested
- Description
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Description
The OTS120N04R is a 40V N-Channel MOSFET designed for efficient power switching. It features low intrinsic capacitances and excellent switching characteristics, alongside an extended safe operating area. This 100% avalanche-tested device provides high reliability with a low typical on-resistance of 2.3mmOhm and is housed in a compact TO-252 package.
OTS120N04R |
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OTS120N04R 40V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
40 |
|
BVdss (V) |
40 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
2.3 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
75 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
20 PF |
|
Coss Typ (pF) |
20 PF |
|
Crss Typ (pF) |
20 PF |
|
Pd (W) |
25 |
|
VRRM (V) |
40 |
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TJ ( degC) |
25 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
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Extended Safe Operating Area. |
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Unrivalled Gate Charge :Qg= 75nC (Typ.). |
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BVDSS=40V,ID=120A |
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RDS(on) : 2.3mmOhm (Typ ) @VG=10V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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