OTS150N03R 30V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 56.9 nC (Typ.).
VDSS= 30V, ID= 150A
RDS(on) : 3.0 mmOhm (Max) @VG=10V
100% Avalanche Tested
- Description
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Description
The OTS150N03R is a 30V N-channel MOSFET designed for efficient power switching and high current handling. It features low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. The device is 100% avalanche tested and comes in a compact TO-252 package, making it ideal for high-density power application requirements.
OTS150N03R | |
| OTS150N03R 30V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 30 |
| BVdss (V) | 30 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 3 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 56.9 |
| VF @25 degC (V) | 1.2 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 15 |
| Coss Typ (pF) | 15 |
| Crss Typ (pF) | 15 |
| Pd (W) | 25 |
| VRRM (V) | 30 |
| TJ ( degC) | 24 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 56.9 nC (Typ.). | |
| VDSS= 30V, ID= 150A | |
| RDS(on) : 3.0 mmOhm (Max) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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