OTS12N10R N-CHANNEL MOSFET
VDS =100V, ID =12A
RDS(ON) < 140mmOhm @ VGS=4.5V (Typ:100mmOhm)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
- Description
- Reviews (0)
Description
The OTS12N10R uses advanced trench technology : n 9 d 5 d e m s° i© gn )tOprovide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
OTS12N10R |
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OTS12N10R N-CHANNEL MOSFET |
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Property |
Value |
|
BVdss (V) |
0 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
130 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
50 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
50 PF |
|
Coss Typ (pF) |
50 PF |
|
Crss Typ (pF) |
50 PF |
|
Pd (W) |
40 |
|
TJ ( degC) |
25 |
Features |
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VDS =100V, ID =12A |
|
|
RDS(ON) < 140mmOhm @ VGS=4.5V (Typ:100mmOhm) |
|
|
High density cell design for ultra low Rdson |
|
|
Fully characterized avalanche voltage and current |
|
|
Good stability and uniformity with high EAS |
|
|
Excellent package for good heat dissipation |
|
|
Special process technology for high ESD capability |
|
|
Power switching application |
|
|
Hard switched and high frequency circuits |
|
|
Uninterruptible power supply |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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