OTS2301 20V P-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 3.3nC (Typ.).
VDSS=-20V,ID=-3A
RDS(on) : 110m mOhm (Max) @VG=-4.5V
100% Avalanche Tested
- Description
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Description
The OTS2301 is a 20V P-Channel MOSFET designed in an SOT-23 package. It is characterized by low intrinsic capacitances, excellent switching performance, and an extended safe operating area, making it suitable for efficient power management and switching applications.
OTS2301 | |
| OTS2301 20V P-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 20 |
| BVdss (V) | -20 |
| Grade | MOSFET |
| Package | SOT-23 |
| RDS(ON) (mOhm) | 110 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 12 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | -10 PF |
| Coss Typ (pF) | -10 PF |
| Crss Typ (pF) | -10 PF |
| Pd (W) | 1 |
| VRRM (V) | 20 |
| TJ ( degC) | -55 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 3.3nC (Typ.). | |
| VDSS=-20V,ID=-3A | |
| RDS(on) : 110m mOhm (Max) @VG=-4.5V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
Reviews
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