OTS2301 20V P-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 3.3nC (Typ.).
VDSS=-20V,ID=-3A
RDS(on) : 110m mOhm (Max) @VG=-4.5V
100% Avalanche Tested
- Description
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Description
The OTS2301 is a 20V P-Channel MOSFET designed in an SOT-23 package. It is characterized by low intrinsic capacitances, excellent switching performance, and an extended safe operating area, making it suitable for efficient power management and switching applications.
OTS2301 |
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OTS2301 20V P-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
20 |
|
BVdss (V) |
-20 |
|
Grade |
MOSFET |
|
Package |
SOT-23 |
|
RDS(ON) (mOhm) |
110 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
12 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
-10 PF |
|
Coss Typ (pF) |
-10 PF |
|
Crss Typ (pF) |
-10 PF |
|
Pd (W) |
1 |
|
VRRM (V) |
20 |
|
TJ ( degC) |
-55 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
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Extended Safe Operating Area. |
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Unrivalled Gate Charge :Qg= 3.3nC (Typ.). |
|
|
VDSS=-20V,ID=-3A |
|
|
RDS(on) : 110m mOhm (Max) @VG=-4.5V |
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100% Avalanche Tested |
|
Applications |
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Power Management, Switching Circuits, Motor Drives |
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Reviews
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