OTS2302 20V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 10nC (Typ.).
VDS=20V,ID=4.0A
RDS(on) : 50 mmOhm (Max) @VGS=2.5V
100% Avalanche Tested
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Description
The OTS2302 is a 20V N-Channel MOSFET designed for high-efficiency power management and switching applications. It features low intrinsic capacitances and excellent switching characteristics, alongside an extended safe operating area and 100% avalanche testing. Housed in a standard SOT-23 package, it is optimized for low gate charge and provides a maximum drain-source on-resistance of 50 mmOhm at a gate-source voltage of 2.5V.
OTS2302 | |
| OTS2302 20V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 20 |
| BVdss (V) | 20 |
| Grade | MOSFET |
| Package | SOT-23 |
| RDS(ON) (mOhm) | 50 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 10 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 10 PF |
| Coss Typ (pF) | 10 PF |
| Crss Typ (pF) | 10 PF |
| Pd (W) | 1 |
| VRRM (V) | 20 |
| TJ ( degC) | -55 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 10nC (Typ.). | |
| VDS=20V,ID=4.0A | |
| RDS(on) : 50 mmOhm (Max) @VGS=2.5V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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