OTS2302 20V N-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 10nC (Typ.).
VDS=20V,ID=4.0A
RDS(on) : 50 mmOhm (Max) @VGS=2.5V
100% Avalanche Tested
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Description
The OTS2302 is a 20V N-Channel MOSFET designed for high-efficiency power management and switching applications. It features low intrinsic capacitances and excellent switching characteristics, alongside an extended safe operating area and 100% avalanche testing. Housed in a standard SOT-23 package, it is optimized for low gate charge and provides a maximum drain-source on-resistance of 50 mmOhm at a gate-source voltage of 2.5V.
OTS2302 |
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OTS2302 20V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
20 |
|
BVdss (V) |
20 |
|
Grade |
MOSFET |
|
Package |
SOT-23 |
|
RDS(ON) (mOhm) |
50 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
10 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
10 PF |
|
Coss Typ (pF) |
10 PF |
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Crss Typ (pF) |
10 PF |
|
Pd (W) |
1 |
|
VRRM (V) |
20 |
|
TJ ( degC) |
-55 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
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Extended Safe Operating Area. |
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Unrivalled Gate Charge :Qg= 10nC (Typ.). |
|
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VDS=20V,ID=4.0A |
|
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RDS(on) : 50 mmOhm (Max) @VGS=2.5V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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