30V N-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 17.5nC (Typ.).
BVDSS=30V, ID=30A
RDS(on) : 0.014 mOhm (Max) @VG=10V
100% Avalanche Tested
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Description
The OTS30N03R is a 30V N-Channel MOSFET designed with low intrinsic capacitances and excellent switching characteristics. It features an extended safe operating area and is 100% avalanche tested, making it suitable for various power management applications in a compact TO-252 package.
OTS30N03R |
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|
30V N-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
30 |
|
BVdss (V) |
30 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
0.014 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
17.5 |
|
IF (A) |
25 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
15 PF |
|
Coss Typ (pF) |
15 PF |
|
Crss Typ (pF) |
15 PF |
|
Pd (W) |
25 |
|
VRRM (V) |
30 |
|
TJ ( degC) |
25 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
|
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Extended Safe Operating Area. |
|
|
Unrivalled Gate Charge :Qg= 17.5nC (Typ.). |
|
|
BVDSS=30V, ID=30A |
|
|
RDS(on) : 0.014 mOhm (Max) @VG=10V |
|
|
100% Avalanche Tested |
|
Applications |
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|
Power Management, Switching Circuits, Motor Drives |
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