30V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 17.5nC (Typ.).
BVDSS=30V, ID=30A
RDS(on) : 0.014 mOhm (Max) @VG=10V
100% Avalanche Tested
- Description
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Description
The OTS30N03R is a 30V N-Channel MOSFET designed with low intrinsic capacitances and excellent switching characteristics. It features an extended safe operating area and is 100% avalanche tested, making it suitable for various power management applications in a compact TO-252 package.
OTS30N03R | |
| 30V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 30 |
| BVdss (V) | 30 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 0.014 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 17.5 |
| IF (A) | 25 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 15 PF |
| Coss Typ (pF) | 15 PF |
| Crss Typ (pF) | 15 PF |
| Pd (W) | 25 |
| VRRM (V) | 30 |
| TJ ( degC) | 25 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg= 17.5nC (Typ.). | |
| BVDSS=30V, ID=30A | |
| RDS(on) : 0.014 mOhm (Max) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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