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Description
The OTS02P06 is a -60V P-Channel MOSFET housed in a compact SOT-23 package. It is designed for high efficiency with low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. The device is 100% avalanche tested and features an unrivalled gate charge of typically 16nC, making it ideal for various power management and switching applications.
OTS02P06 |
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60V P-Channel MOSFET |
|
Property |
Value |
|
Vrrm (V) |
60 |
|
BVdss (V) |
-60 |
|
Grade |
MOSFET |
|
Package |
SOT-23 |
|
RDS(ON) (mOhm) |
150 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
16 |
|
VF @25 degC (V) |
0 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
1200 |
|
Coss Typ (pF) |
-30 |
|
Crss Typ (pF) |
-30 |
|
Pd (W) |
25 |
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VRRM (V) |
60 |
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TJ ( degC) |
55 |
Features |
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Low Intrinsic Capacitances |
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Excellent Switching Characteristics |
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Extended Safe Operating Area |
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Unrivalled Gate Charge :Qg= 16nC (Typ.) |
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BVDSS=-60V, ID=-2.5 A |
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RDS(on) : 150 mmOhm (Max) @VG=-10V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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