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Description
The OTS02P06 is a -60V P-Channel MOSFET housed in a compact SOT-23 package. It is designed for high efficiency with low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area. The device is 100% avalanche tested and features an unrivalled gate charge of typically 16nC, making it ideal for various power management and switching applications.
OTS02P06 | |
| 60V P-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 60 |
| BVdss (V) | -60 |
| Grade | MOSFET |
| Package | SOT-23 |
| RDS(ON) (mOhm) | 150 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 16 |
| VF @25 degC (V) | 0 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 1200 |
| Coss Typ (pF) | -30 |
| Crss Typ (pF) | -30 |
| Pd (W) | 25 |
| VRRM (V) | 60 |
| TJ ( degC) | 55 |
Features | |
| Low Intrinsic Capacitances | |
| Excellent Switching Characteristics | |
| Extended Safe Operating Area | |
| Unrivalled Gate Charge :Qg= 16nC (Typ.) | |
| BVDSS=-60V, ID=-2.5 A | |
| RDS(on) : 150 mmOhm (Max) @VG=-10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |


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