650V N-Channel MOSFET

$0

650 V, 7A
RDS(ON) Typ = 650m°& @ VGS = 10V
Lea Low FOM RDS(ON) x Qg
Extremely low losses due tOvery low Eon and Eoff
Qualified for industrial grade applications according tOJEDEC
Excellent stability and uniformity
SMPS
Adapter
LED lighting
EV Charger
Telecom power
Solar Inverter

SKU: OCS65R800RM Category: MOSFETs & Power Transistors

Description

The OCS65R800RM is a 650V N-Channel MOSFET designed for high-efficiency power applications. It features a low typical ON-resistance of 650m°& and a low Figure of Merit (FOM). The device is characterized by extremely low losses due tOlow switching energies (Eon and Eoff), and it is qualified for industrial-grade applications according tOJEDEC standards, ensuring excellent stability and uniformity.

OCS65R800RM

650V N-Channel MOSFET

 

Property

Value

Vrrm (V)

650

BVdss (V)

650

Grade

MOSFET

Package

ABS

RDS(ON) (mOhm)

650

VTH @25 degC (V)

0

Qg (nC)

0

IF (A)

400

ID @25 degC (A)

0

Ciss Typ (pF)

0

Coss Typ (pF)

0

Crss Typ (pF)

0

Pd (W)

25

Rds(on) Typ (Ohm)

650

VRRM (V)

650

TJ ( degC)

25

Features

650 V, 7A

RDS(ON) Typ = 650m°& @ VGS = 10V

Lea Low FOM RDS(ON) x Qg

Extremely low losses due tOvery low Eon and Eoff

Qualified for industrial grade applications according tOJEDEC

Excellent stability and uniformity

SMPS

Adapter

LED lighting

EV Charger

Telecom power

Solar Inverter

Applications

Power Management, Switching Circuits, Motor Drives

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