OCS50N50W 500V N-Channel MOSFET
$0
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=130nC (Typ.).
VDSS=500V,ID=50 A
RDS(on) : 85mmOhm (Tye ) @VGS=10V
100% Avalanche Tested
- Description
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Description
The OCS50N50W is a 500V N-Channel MOSFET designed for high-efficiency switching power supplies. It features low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area, and is 100% avalanche tested tOensure reliable performance in demanding applications.
OCS50N50W |
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OCS50N50W 500V N-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
500 |
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BVdss (V) |
500 |
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Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
85 |
|
VTH @25 degC (V) |
0 |
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Qg (nC) |
130 |
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ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
0 |
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Coss Typ (pF) |
0 |
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Crss Typ (pF) |
0 |
|
Pd (W) |
540 |
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VRRM (V) |
500 |
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TJ ( degC) |
-55 |
Features |
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Low Intrinsic Capacitances. |
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Excellent Switching Characteristics. |
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Extended Safe Operating Area. |
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Unrivalled Gate Charge :Qg=130nC (Typ.). |
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VDSS=500V,ID=50 A |
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RDS(on) : 85mmOhm (Tye ) @VGS=10V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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