OCS50N50W 500V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=130nC (Typ.).
VDSS=500V,ID=50 A
RDS(on) : 85mmOhm (Tye ) @VGS=10V
100% Avalanche Tested
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Description
The OCS50N50W is a 500V N-Channel MOSFET designed for high-efficiency switching power supplies. It features low intrinsic capacitances, excellent switching characteristics, and an extended safe operating area, and is 100% avalanche tested tOensure reliable performance in demanding applications.
OCS50N50W | |
| OCS50N50W 500V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 500 |
| BVdss (V) | 500 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 85 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 130 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 0 |
| Coss Typ (pF) | 0 |
| Crss Typ (pF) | 0 |
| Pd (W) | 540 |
| VRRM (V) | 500 |
| TJ ( degC) | -55 |
Features | |
| Low Intrinsic Capacitances. | |
| Excellent Switching Characteristics. | |
| Extended Safe Operating Area. | |
| Unrivalled Gate Charge :Qg=130nC (Typ.). | |
| VDSS=500V,ID=50 A | |
| RDS(on) : 85mmOhm (Tye ) @VGS=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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