OCS6N80 N-CHANNEL MOSFET
Low gate charge
Low Crss (typical 9pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
- Description
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Description
The OCS6N80 is an N-channel enhancement mode MOSFET featuring low gate charge, low reverse transfer capacitance, and fast switching speeds. It is 100% avalanche tested and offers improved dv/dt capability, making it suitable for high-efficiency switch-mode power supplies, electronic lamp ballasts based on half bridge, and UPS applications.
OCS6N80 | |
| OCS6N80 N-CHANNEL MOSFET | |
Property | Value |
| BVdss (V) | 250 |
| Grade | MOSFET |
| Package | TO-220 |
| RDS(ON) (mOhm) | 10 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 640 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 25 |
| Coss Typ (pF) | 25 |
| Crss Typ (pF) | 9 |
| Pd (W) | 25 |
| TJ ( degC) | -55 |
Features | |
| Low gate charge | |
| Low Crss (typical 9pF) | |
| Fast switching | |
| 100% avalanche tested | |
| Improved dv/dt capability | |
| RoHS product | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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