OT40T135W N-CHANNEL IGBT
Low gate charge
Trench FS Technology
Saturation voltage: VCE(sat), typ = 2.0V @ Ic = 40A and TC = 25°C
RoHS product
- Description
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Description
The OT40T135W is an N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Trench FS technology, designed specifically for power switch circuits in induction cookers (IH). It features a low gate charge, low saturation voltage, and is a RoHS compliant product suitable for efficient power switching.
OT40T135W | |
| OT40T135W N-CHANNEL IGBT | |
Property | Value |
| BVCEs (V) | 1350 |
| Grade | IGBT |
| Package | ABS |
| IF (A) | 40 |
| VF @25 degC (V) | 2.8 |
| IC @100 degC (A) | 40 |
| VCE(sat) Typ (V) | 2 |
| Pd (W) | 25 |
| TJ ( degC) | 150 |
Features | |
| Low gate charge | |
| Trench FS Technology | |
| Saturation voltage: VCE(sat), typ = 2.0V @ Ic = 40A and TC = 25°C | |
| RoHS product | |
Applications | |
| Motor Control, Inverters, Power Conversion Systems | |
Reviews
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