OTS2310 60V N-Channel MOSFET

$0

Advanced Trench Technology
Excellent Switching Characteristics
Extended Safe Operating Area
Ultra Low Gate Charge:Qg=9nC (Typ.)
VDSS=60V, ID=3A
Rds(on): 75mmOhm (Typ.) @VG=10V
100% Avalanche Tested

SKU: OTS2310 Category: MOSFETs & Power Transistors

Description

The OTS2310 is a 60V N-Channel MOSFET utilizing advanced trench technology tOprovide excellent switching performance and a low gate charge of typically 9nC. This device is 100% avalanche tested and offers an extended safe operating area, making it suitable for a wide range of power management applications.

OTS2310

OTS2310 60V N-Channel MOSFET

 

Property

Value

Vrrm (V)

60

BVdss (V)

60

Grade

MOSFET

Package

ABS

RDS(ON) (mOhm)

75

VTH @25 degC (V)

0

Qg (nC)

9

ID @25 degC (A)

0

Ciss Typ (pF)

25

Coss Typ (pF)

25

Crss Typ (pF)

25

Pd (W)

25

VRRM (V)

60

TJ ( degC)

25

Features

Advanced Trench Technology

Excellent Switching Characteristics

Extended Safe Operating Area

Ultra Low Gate Charge:Qg=9nC (Typ.)

VDSS=60V, ID=3A

Rds(on): 75mmOhm (Typ.) @VG=10V

100% Avalanche Tested

Applications

Power Management, Switching Circuits, Motor Drives

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