OTS2310 60V N-Channel MOSFET
Advanced Trench Technology
Excellent Switching Characteristics
Extended Safe Operating Area
Ultra Low Gate Charge:Qg=9nC (Typ.)
VDSS=60V, ID=3A
Rds(on): 75mmOhm (Typ.) @VG=10V
100% Avalanche Tested
- Description
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Description
The OTS2310 is a 60V N-Channel MOSFET utilizing advanced trench technology tOprovide excellent switching performance and a low gate charge of typically 9nC. This device is 100% avalanche tested and offers an extended safe operating area, making it suitable for a wide range of power management applications.
OTS2310 | |
| OTS2310 60V N-Channel MOSFET | |
Property | Value |
| Vrrm (V) | 60 |
| BVdss (V) | 60 |
| Grade | MOSFET |
| Package | ABS |
| RDS(ON) (mOhm) | 75 |
| VTH @25 degC (V) | 0 |
| Qg (nC) | 9 |
| ID @25 degC (A) | 0 |
| Ciss Typ (pF) | 25 |
| Coss Typ (pF) | 25 |
| Crss Typ (pF) | 25 |
| Pd (W) | 25 |
| VRRM (V) | 60 |
| TJ ( degC) | 25 |
Features | |
| Advanced Trench Technology | |
| Excellent Switching Characteristics | |
| Extended Safe Operating Area | |
| Ultra Low Gate Charge:Qg=9nC (Typ.) | |
| VDSS=60V, ID=3A | |
| Rds(on): 75mmOhm (Typ.) @VG=10V | |
| 100% Avalanche Tested | |
Applications | |
| Power Management, Switching Circuits, Motor Drives | |
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