OTS2310 60V N-Channel MOSFET
$0
Advanced Trench Technology
Excellent Switching Characteristics
Extended Safe Operating Area
Ultra Low Gate Charge:Qg=9nC (Typ.)
VDSS=60V, ID=3A
Rds(on): 75mmOhm (Typ.) @VG=10V
100% Avalanche Tested
- Description
- Reviews (0)
Description
The OTS2310 is a 60V N-Channel MOSFET utilizing advanced trench technology tOprovide excellent switching performance and a low gate charge of typically 9nC. This device is 100% avalanche tested and offers an extended safe operating area, making it suitable for a wide range of power management applications.
OTS2310 |
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OTS2310 60V N-Channel MOSFET |
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Property |
Value |
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Vrrm (V) |
60 |
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BVdss (V) |
60 |
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Grade |
MOSFET |
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Package |
ABS |
|
RDS(ON) (mOhm) |
75 |
|
VTH @25 degC (V) |
0 |
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Qg (nC) |
9 |
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ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
25 |
|
Coss Typ (pF) |
25 |
|
Crss Typ (pF) |
25 |
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Pd (W) |
25 |
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VRRM (V) |
60 |
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TJ ( degC) |
25 |
Features |
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Advanced Trench Technology |
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Excellent Switching Characteristics |
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Extended Safe Operating Area |
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Ultra Low Gate Charge:Qg=9nC (Typ.) |
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VDSS=60V, ID=3A |
|
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Rds(on): 75mmOhm (Typ.) @VG=10V |
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100% Avalanche Tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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