OTS60P03F -30V P-Channel MOSFET
$0
P-Channel: -30V -60A
RDS(on)Typ = 5.5mmOhm@VGS = -10 V
RDS(on) = 8.3mmOhm@VGS = -4.5 V
Very Low On resistance RDS(ON)
Low Crss
Fast switching
100% avalanche tested
- Description
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Description
This Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored tOminimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
OTS60P03F |
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OTS60P03F -30V P-Channel MOSFET |
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Property |
Value |
|
Vrrm (V) |
30 |
|
BVdss (V) |
-30 |
|
Grade |
MOSFET |
|
Package |
ABS |
|
RDS(ON) (mOhm) |
5.5 |
|
VTH @25 degC (V) |
0 |
|
Qg (nC) |
-15 |
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VF @25 degC (V) |
-2 |
|
ID @25 degC (A) |
0 |
|
Ciss Typ (pF) |
-15 |
|
Coss Typ (pF) |
-15 |
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Crss Typ (pF) |
-15 |
|
Pd (W) |
25 |
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Rds(on) Typ (Ohm) |
5.5 |
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VRRM (V) |
30 |
|
TJ ( degC) |
0 |
Features |
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P-Channel: -30V -60A |
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RDS(on)Typ = 5.5mmOhm@VGS = -10 V |
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RDS(on) = 8.3mmOhm@VGS = -4.5 V |
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Very Low On resistance RDS(ON) |
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Low Crss |
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Fast switching |
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100% avalanche tested |
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Applications |
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Power Management, Switching Circuits, Motor Drives |
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