8–11 GHz Wideband Variable-Gain Transceiver IC – MH130
LO frequency range: 7–9 GHz
IF frequency range: 1–3 GHz
RX gain: 10 dB typ.
TX gain: 14 dB typ.
7 dB adjustable gain
Supply voltage: 1.8 V
Integrated up-conversion and down-conversion
Silicon-based transceiver IC
- Description
- Datasheet
- Functional Block Diagram
Description
The MH130 is a silicon-based wideband variable-gain transceiver IC. It integrates up-conversion and down-conversion, a low-noise amplifier, an IF amplifier, switches, a driver amplifier and a power amplifier.
On-chip gain is adjustable. The device is suitable for a range of transceiver systems, including superheterodyne frequency-conversion chains and analog phased-array systems.
Product status: Engineering sample.
Wideband Variable-Gain Transceiver IC Specifications | |
| 8–11 GHz RF, 7–9 GHz LO, 1–3 GHz IF | |
| MH130 | |
Property | Value |
| RF frequency range | 8–11 GHz |
| LO frequency range | 7–9 GHz |
| IF frequency range | 1–3 GHz |
| LO power (min. / typ. / max.) | 0 / 3 / 5 dBm |
| RX gain (typ.) | 10 dB; 7 dB adjustable |
| RX input 1 dB compression point (typ.) | −4 dBm |
| RX noise figure (typ.) | 13 dB |
| TX gain (typ.) | 14 dB; 7 dB adjustable |
| TX output 1 dB compression point (typ.) | 11 dBm |
| LO-to-RF isolation (typ.) | 40 dB |
| LO-to-IF isolation (typ.) | 60 dB |
| Operating current (RX / TX) | 90 / 210 mA |
| Supply voltage | 1.8 V |
| Die dimensions | 2.12 × 1.83 mm |
| Operating temperature range | −55 to +85 °C |
Features | |
| Silicon-based transceiver IC | |
| Integrated up-conversion and down-conversion | |
| Integrated low-noise amplifier, IF amplifier, switches, driver amplifier and power amplifier | |
| On-chip adjustable gain | |
Application Scenarios
Functional Block Diagram
