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CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor300 V / 3750 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-3750-M-D3
Rated Voltage (Ur): 300 V
Capacitance (CR): 3750 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: D3
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
300 V / 5000 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-5000-K-D4
Rated Voltage (Ur): 300 V
Capacitance (CR): 5000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: D4
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
300 V / 5000 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-5000-M-D4
Rated Voltage (Ur): 300 V
Capacitance (CR): 5000 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: D4
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor300 V / 630 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-630-K-B1
Rated Voltage (Ur): 300 V
Capacitance (CR): 630 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: B1
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
300 V / 630 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-300-630-M-B1
Rated Voltage (Ur): 300 V
Capacitance (CR): 630 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: B1
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
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Dipole Antenna30MHz to 600MHz, N Female, Dipole Antenna-OPO-00306-100W
$1790Frequency Range: (30-600)MHz
Max. VSWR: 3.5:1
Power Handling: 100W
Pattern Type: Omnidirectional
Connector Type: N
OPO-00306-100W dipole antenna is Designed for harsh environment with extremely wide range frequency, High efficiency and radiation characteristics. -
MOSFETs & Power Transistors
30V N-Channel MOSFET
30V, 160A
RDS(ON) Typ = 1.4mmOhm @ VGS = 10V
RDS(ON) Typ = 2.3mmOhm @ VGS = 4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED!
Applications: Load Switch, PWM… -
MOSFETs & Power Transistors
30V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 17.5nC (Typ.).
VDSS=30V,ID=20A
RDS(on) : 0.016mOhm (Max) @VG=10V
100% Avalanche Tested -
MOSFETs & Power Transistors
30V N-Channel MOSFET
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
30V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 17.5nC (Typ.).
BVDSS=30V, ID=30A
RDS(on) : 0.014 mOhm (Max) @VG=10V
100% Avalanche Tested -
Active Device, Power Amplifier, Routing
30W Ultra Wide Band AC Power Amplifier . 0.7GHz~ 6GHz . OACPA00700600D
RFECHO Power Amplifier from 0.7GHz to 6GHz，RFECHO power amplifier can perfectly linearly amplify the input signals in a wide dynamic range within a frequency band.the application of Wide Band Medium…
