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Bipolar Transistors60V N-Channel Enhancement Mode
$0VDS = 60V, ID = 0.3A
RDS(ON) < 4mOhm @ VGS=5V
RDS(ON) < 3mOhm @ VGS=10V
ESD Rating: HBM 2000V
High power and current handing capability
Lead free product is acquired
Surface mount package
Direct logic-level interface:… -
Bipolar Transistors
60V N-Channel MOSFET
$0Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc
ESD Protected… -
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Bipolar Transistors
OMMBT3904
$0NPN Transistor
Complementary tOMMBT3906
SOT-23 Package
Marking: 1AM -
Bipolar Transistors
OMMBT5401 SOT-23 Plastic-Encapsulate
$0PNP Transistor
Complementary tOMMBT5551
Ideal for Medium Power Amplification and Switching -
Bipolar Transistors
OMMBT5551
$0This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix “-Y” means hFE… -
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