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MOSFETs & Power TransistorsN-CHANNEL SJ MOSFET
650V, 30A
RDS(ON) Typ = 141mmOhm@ VGS = 10V
Designed for low on-state resistance and high frequency
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance -
Rectifiers & Diodes
O120A0_x0001_100V NlŸSXž_:W‹W:eH^”{¡
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cÐSGN† dv/dt €ýR› -
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Rectifiers & Diodes
O1N4148W Small-Signal Fast Switching
VR 75V
IFAV 150mA
Extreme fast switches
Package: SOD123
Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
Polarity: Cathode line denotes the cathode end
Marking: T4 -
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MOSFETs & Power Transistors
O250V N-Channel MOSFET
Low gate charge
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
O30V N-Channel MOSFET
Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 10nC (Typ.).
BVDSS=30V,ID=5.0A
RDS(on) : 42mmOhm (Max) @VG=4.5V
100% Avalanche Tested -
MOSFETs & Power Transistors
O650V N-Channel MOSFET
650V, 24A
RDS(ON) Typ = 130mmOhm @ VGS = 10V
Low on-state resistance and high frequency design
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance MOSFET designed for low on-state resistance and -
MOSFETs & Power Transistors
O650V N-Channel MOSFET
650V 8A
RDS(ON) Typ = 500mmOhm @ VGS = 10V
Low FOM RDS(ON) × QG
Extremely low losses due tOvery low Eon and Eoff
Qualified for industrial grade applications according tOJEDEC
Excellent stability and uniformity -
GaN Power Devices
OAN070N65K 650V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free -
GaN Power Devices
OAN070N70K 700V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free -
GaN Power Devices
OAN125N65D 650V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent Qg x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free -
GaN Power Devices
OAN125N65K 650V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free -
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GaN Power Devices
OAN125N70D 700V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free -