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Tantalum Hybrid CapacitorHigh energy tantalum hybrid capacitors 80V 860uF Mounting Frame
$259.00Capacitance: 8600uF
Voltage: 80V
Max ESR: 0.4Ω
High Storage Capacity
Gas tight and compact design -
Tantalum Hybrid Capacitor
High energy tantalum hybrid capacitors 80V 860uF , Screw Mounting
$259.00Capacitance: 8600uF
Voltage: 80V
Max ESR: 0.4Ω
High Storage Capacity
Gas tight and compact design
Screws to mount -
Rectifiers & DiodesHigh Speed Switching Diode
VR 75V
IFAV 150mA
Typical Applications: Extreme fast switches
Package: SOD323
Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
Polarity: Cathode line denotes the cathode end
Marking: T4 -
IGBT Modules
IGBT 34mm Half-Bridge Module
1200V 100A
VCE(sat)(typ.)= 2.45V @VGE= 15V,Ic= 100A
High speed switching
Higher system efficiency
Soft current turn-off waveforms JIAEN FS IGBTs offer lower losses and higher -
IGBT Modules
IGBT 62mm SJhej!WW
1200V 200A
VCE(sat)(typ.) = 2.6V @VGE= 15V, IC= 200A
High speed switching
Higher system efficiency
Soft current turn-off waveforms JIAEN FS IGBTs offer lower losses and higher -
Rectifiers & Diodes
MBR40200S
Common cathode structure
Low power loss, high efficiency
High Operating Junction Temperature
Guard ring for overvoltage protection. High reliability
RoHS product -
Rectifiers & Diodes
MINIATURE SINGLE-PHASE GFAST
Fast recovery glass passivated chip
Low forward voltage drop
High surge current capability
Low reverse leakage current
Ideal for printed circuit board
High temperature soldering guaranteed: 260°C for 10 seconds -
MOSFETs & Power Transistors
N-channel , 11A, 0.36mOhm Super-Junction P
Very low FOM RDS(on)×Qg
100% UIS tested
RoHS compliant Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFET, designed according tOthe SJ principle. The resulting device has extremely low… -
MOSFETs & Power Transistors
N-CHANNEL MOSFET
Low gate charge
Low Crss (typical 3.06pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
N-CHANNEL MOSFET
Low gate charge
Low Crss (typical 14pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
N-CHANNEL MOSFET
Low gate charge
Low Crss (typical 14pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
N-CHANNEL MOSFET
Low gate charge
Super Junction MOS
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
N-CHANNEL MOSFET
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product -
MOSFETs & Power Transistors
N-CHANNEL MOSFET
Low gate charge
Low Rdson
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product OGS200N04 is an N-channel MOSFET designed for telecom and industrial isolated DC/DC converters and synchronous rectification in power -
MOSFETs & Power Transistors
N-CHANNEL Power MOSFET
Advanced Split Gate Trench Technology
Excellent RDS(ON) and Low Gate Charge
100% UIS TESTED!
100% °”Vds TESTED! -
MOSFETs & Power Transistors
N-CHANNEL SJ MOSFET
VDS = 650V @ Tj,max
Typ. RDS(on) = 0.063mOhm
100% UIS tested
Pb-free plating, Halogen free OCS65R070 is an N-channel Super Junction Power MOSFET featuring a 650V drain-source voltage and