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SP8T, Switch
12-18 GHz Reflective SP8T PIN Switch
Frequency Range: 12-18 GHz
Switch Design: Reflective
Switching Speed: 150ns
Input/ Output Connectors: SMA-Female
Insertion Loss: ≤4.0 dB
Isolation: ≥ 70 dB
VSWR: ≤ 2.0:1 -
SP2T, Switch
12-18 GHz Reflective SPDT PIN Switch
Frequency Range: 12-18 GHz
Switch Design: Reflective
Switching Speed: 100ns
Input/ Output Connectors: SMA-Female
Insertion Loss: ≤2.8 dB
Isolation: ≥ 60 dB
VSWR: ≤ 2.0:1 -
SP2T, Switch
12-18 GHz Reflective SPDT PIN Switch
Frequency Range: 12-18 GHz
Switch Design: Reflective
Switching Speed: 100ns
Input/ Output Connectors: SMA-Female
Insertion Loss: ≤2.8 dB
Isolation: ≥ 70 dB
VSWR: ≤ 2.0:1 -
SPST, Switch
12–18 GHz Absorptive SPST PIN Switch
Broadband 12–18 GHz;Low Insertion Loss;
High Isolation;
Fast Switching Speed;
Absorptive, 50 Ω Matched -
Active Device, EMC Power Amplifier
18GHz-26.5GHz 10W RF Power Amplifier
The 18GHz-26.5GHz 10W product is the core product of our company. It adopts all-solid continuous wave scheme, redundancy and high reliability circuit design scheme, and has perfect self-protection ability. Operating…
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Active Device, EMC Power Amplifier
18GHz-26.5GHz 30W RF Power Amplifier
The 18GHz-26.5GHz 30W product is the core product of our company. It adopts all-solid continuous wave scheme, redundancy and high reliability circuit design scheme, and has perfect self-protection ability. Operating…
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Active Device, EMC Power Amplifier
18GHz-26.5GHz 50W RF Power Amplifier
The 18GHz-26.5GHz 50W product is the core product of our company. It adopts all-solid continuous wave scheme, redundancy and high reliability circuit design scheme, and has perfect self-protection ability. Operating…
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Active Device, EMC Power Amplifier
1GHz-6GHz 100W RF Power Amplifier
The 1GHz-6GHz 100W product is the core product of our company. It adopts all-solid continuous wave scheme, redundancy and high reliability circuit design scheme, and has perfect self-protection ability. Operating…
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Active Device, EMC Power Amplifier
1GHz-6GHz 200W RF Power Amplifier
The 1GHz-6GHz 200W product is the core product of our company. It adopts all-solid continuous wave scheme, redundancy and high reliability circuit design scheme, and has perfect self-protection ability. Operating…
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Active Device, EMC Power Amplifier
1GHz-6GHz 400W RF Power Amplifier
The 1GHz-6GHz 400W product is the core product of our company. It adopts all-solid continuous wave scheme, redundancy and high reliability circuit design scheme, and has perfect self-protection ability. Operating…
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Active Device, EMC Power Amplifier
1GHz-6GHz 50W RF Power Amplifier
The 1GHz-6GHz 50W product is the core product of our company. It adopts all-solid continuous wave scheme, redundancy and high reliability circuit design scheme, and has perfect self-protection ability. Operating…
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SP16T, Switch
2-12 GHz Absorptive SP16T PIN Switch
Frequency Range: 2-12 GHz
Switch Design: Absorptive
Switching Speed: 150ns
Input/ Output Connectors: SMA-Female
Insertion Loss: ≤5.2 dB
Isolation: ≥ 80 dB
VSWR: ≤ 1.8:1 -
SP6T, Switch
2-12 GHz Absorptive SP6T PIN Switch
Frequency Range: 2-12 GHz
Switch Design: Absorptive
Switching Speed: 120ns
Input/ Output Connectors: SMA-Female
Insertion Loss: ≤3.2 dB
Isolation: ≥ 65 dB
VSWR: ≤ 1.7:1 -
SP6T, Switch
2-12 GHz Reflective SP6T PIN Switch
Frequency Range: 2-12 GHz
Switch Design: Reflective
Switching Speed: 150ns
Input/ Output Connectors: SMA-Female
Insertion Loss: ≤3.0 dB
Isolation: ≥ 70 dB
VSWR: ≤ 2.0:1 -
SP16T, Switch
2-18 GHz Absorptive SP16T PIN Switch
Frequency Range: 2-18 GHz
Switch Design: Absorptive
Switching Speed: 150ns
Input/ Output Connectors: SMA-Female
Insertion Loss: ≤7.0 dB
Isolation: ≥ 80 dB
VSWR: ≤ 2.0:1 -
SP3T, Switch
2-18 GHz Absorptive SP3T PIN Switch
Frequency Range: 2-18 GHz
Switch Design: Absorptive
Switching Speed: 100ns
Input/ Output Connectors: SMA-Female
Insertion Loss: ≤3.5 dB
Isolation: ≥ 80 dB
VSWR: ≤ 2.0:1















