-
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor63 V / 800 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-63-800-K-CA3-B
Rated Voltage (Ur): 63 V
Category Voltage (Uc): 37.8 V
Surge Voltage (Us): 69.3 V
Capacitance (CR): 800 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CA3 / Size: 12 x 12 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor63 V / 800 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-63-800-K-CA3-C
Rated Voltage (Ur): 63 V
Category Voltage (Uc): 37.8 V
Surge Voltage (Us): 69.3 V
Capacitance (CR): 800 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CA3 / Size: 12 x 12 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor63 V / 9000 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-63-9000-K-CE4-A
Rated Voltage (Ur): 63 V
Category Voltage (Uc): 37.8 V
Surge Voltage (Us): 69.3 V
Capacitance (CR): 9000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE4 / Size: 36 x 16 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
63 V / 9000 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-63-9000-K-CE4-B
Rated Voltage (Ur): 63 V
Category Voltage (Uc): 37.8 V
Surge Voltage (Us): 69.3 V
Capacitance (CR): 9000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE4 / Size: 36 x 16 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
63 V / 9000 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-63-9000-K-CE4-C
Rated Voltage (Ur): 63 V
Category Voltage (Uc): 37.8 V
Surge Voltage (Us): 69.3 V
Capacitance (CR): 9000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE4 / Size: 36 x 16 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor63 V / 9000 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-63-9000-K-CE4-BL
Rated Voltage (Ur): 63 V
Category Voltage (Uc): 37.8 V
Surge Voltage (Us): 69.3 V
Capacitance (CR): 9000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE4 / Size: 36 x 16 -
CAK36C Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor63 V / 9000 uF CAK36C Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36C-63-9000-K-CE4-CL
Rated Voltage (Ur): 63 V
Category Voltage (Uc): 37.8 V
Surge Voltage (Us): 69.3 V
Capacitance (CR): 9000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: CE4 / Size: 36 x 16 -
CAK36F Hermetically Sealed High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor63 V / 9000 uF CAK36F Hermetically Sealed High-Energy Composite Tantalum Capacitor
CAK36F-63-9000-K-FE4-E
Rated Voltage (Ur): 63 V
Category Voltage (Uc): 37.8 V
Surge Voltage (Us): 69.3 V
Capacitance (CR): 9000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: FE4 / Size: 36 x 16 -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor63 V / 96000 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-63-96000-K-D3
Rated Voltage (Ur): 63 V
Capacitance (CR): 96000 uF
Capacitance Tolerance: +/-10% (Code K)
Case Code: D3
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
CAK36M Combined High-Temperature (150°C) High-Energy Hybrid Tantalum Capacitor
63 V / 96000 uF CAK36M High-Temperature (150degC) High-Energy Hybrid Tantalum Capacitor
CAK36M-63-96000-M-D3
Rated Voltage (Ur): 63 V
Capacitance (CR): 96000 uF
Capacitance Tolerance: +/-20% (Code M)
Case Code: D3
Operating Temperature: -55 to +125°C
Maximum Operating Temperature: 150°C -
GaN Power Devices650V GaN Power Transistor
Easy tOuse, compatible with standard gate drivers
Excellent QG x RDS(on) figure of merit (FOM)
Low QRR, nOfree-wheeling diode required
Low switching loss
RoHS compliant and Halogen-free -
MOSFETs & Power Transistors
650V N-Channel MOSFET
650V, 28A
RDS(ON) Typ =78mmOhm @ VGS = 10V
Ultra-low on-resistance
Low RDS(ON)
Fast reverse recovery body diode -
MOSFETs & Power Transistors
650V N-Channel MOSFET
650V, 25A
RDS(ON) = 180 mmOhm @ VGS = 10V
It has been designed tOlow on-state resistance and high frequency
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance -
MOSFETs & Power Transistors
650V N-Channel MOSFET
650V, 30A
RDS(ON) = 180 mmOhm @ VGS = 10V
Designed for low on-state resistance and high frequency
Fast reverse recovery body diode
Low RDS(ON)
Ultra-low on-resistance -
MOSFETs & Power Transistors
650V N-Channel MOSFET
650 V, 7A
RDS(ON) Typ = 650m°& @ VGS = 10V
Lea Low FOM RDS(ON) x Qg
Extremely low losses due tOvery low Eon and Eoff
Qualified for industrial grade applications according tOJEDEC
Excellent stability… -
MOSFETs & Power Transistors
650V N-Channel SJ MOSFET
650 V, 15A
RDS(ON) Typ = 250mmOhm @ VGS = 10V
650 V Super Junction Power MOSFET
Designed for low on-state resistance
Superior EAS performance